2SB648, 2SB648a silicon pnp epitaxial application low frequency high voltage amplifier complementary pair with 2sd668/a outline 1 2 3 1. emitter 2. collector 3. base to-126 mod absolute maximum ratings (ta = 25 c) ratings item symbol 2SB648 2SB648a unit collector to base voltage v cbo C180 C180 v collector to emitter voltage v ceo C120 C160 v emitter to base voltage v ebo C5 C5 v collector current i c C50 C50 ma collector peak current i c(peak) C100 C100 ma collector power dissipation p c 11w junction temperature tj 150 150 c storage temperature tstg C55 to +150 C55 to +150 c
2SB648, 2SB648a 2 electrical characteristics (ta = 25 c) 2SB648 2SB648a item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo C180 C180 v i c = C10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo C120 C160 v i c = C1 ma, r be = emitter to base breakdown voltage v (br)ebo C5C5v i e = C10 m a, i c = 0 collector cutoff current i cbo C10 C10 m av cb = C160 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 60 200 v ce = C5 v, i c = C10 ma h fe2 30 30 v ce = C5 v, i c = C1 ma collector to emitter saturation voltage v ce(sat) C2C2v i c = C30 ma, i b = C3 ma base to emitter voltage v be C1.5C1.5v v ce = C5 v, i c = C10 ma gain bandwidth product f t 140 140 mhz v ce = C10 v, i c = C10 ma collector output capacitance cob 4.5 4.5 pf v cb = C10 v, i e = 0, f = 1 mhz note: 1. the 2SB648 and 2SB648a are grouped by h fe1 as follows. bcd 2SB648 60 to 120 100 to 200 160 to 320 2SB648a 60 to 120 100 to 200
2SB648, 2SB648a 3 maximum collector dissipation
curve 1.5 1.0 0.5 0 50 100 150 ambient temperature ta ( c) collector power dissipation p c (w) typical output characteristics ?0 ?6 ?2 ? ? 0 3 6 ? collector to emitter voltage v ce (v) ? ?0 i b = 0 ?0 m a ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?00 ?10 ?20 ?30 collector current i c (ma) typical transfer characteristics ?0 ?0 ?0 ?.0 ?.0 ?.0 0 ?.4 base to emitter voltage v be (v) ?.8 ?.2 ?.6 ?.0 v ce = ? v ta = 75 c 25 ?5 collector current i c (ma) dc current transfer ratio
vs. collector current v ce = ? v ta = 75 c 240 200 160 120 80 40 0 ?.5 ? ?0 ?0 ? collector current i c (ma) ?0 ?.0 25 ?5 dc current transfer ratio h fe
2SB648, 2SB648a 4 saturation voltage vs.
collector current ?.5 ? ?0 ?0 ? 75 25 ta = ?5 c 25 75 collector current i c (ma) ?0 ?.0 v ce(sat) v be(sat) i c = 10 i b ?.2 ?.0 ?.8 ?.6 ?.4 ?.2 0 ?.48 ?.40 ?.32 ?.24 ?.16 ?.08 0 ta = ?5 c base to emitter saturation voltage
v be(sat) (v) collector to emitter saturation voltage
v ce(sat) (v) gain bandwidth product
vs. collector current 500 200 50 100 gain bandwidth product f t (mhz) 20 10 v ce = ?0 v ? ? ?0 ? ?0 ?0 colletor current i c (ma) f = 1 mhz
i e = 0 collector output capacitance vs.
collector to base voltage 50 20 10 5 2 1.0 0.5 ? ? ?0 ?00 ?0 ? ?0 collector output capacitance c ob (pf) collector to base voltage v cb (v)
2SB648, 2SB648a 5 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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